FDMC86340ET80 mosfet equivalent, n-channel mosfet.
* Extended TJ Rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A
* Max rDS(on) = 8.5 mW at VGS = 8 V, ID = .
* DC−DC Conversion
DATA SHEET www.onsemi.com
VDS 80 V
rDS(on) MAX 6.5 mW @ 10 V 8.5 mW @ 8 V
ID MAX 68 A
Pin 1
.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
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